A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by an electrophoretic deposition (EPD)-gate approach

作者：Hung Ching Wen; Chang Ching Hong; Chen Wei Cheng; Chen Chun Chia; Chen Huey Ing; Tsai Yu Ting; Tsai Jung Hui; Liu Wen Chau

来源：Solid-State Electronics, 2016, 124: 5-9.

DOI：10.1016/j.sse.2016.06.011

• Heterostructure field-effect transistor (HFET)
• Temperature-dependent I-V characteristics
• Electrophoretic deposition (EPD)
• Reverse micelle

Based on an electrophoretic deposition (EPD)-gate approach, a Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) is fabricated and investigated at higher temperatures. The Pt/AlGaN interface with nearly oxide-free is verified by an Auger Electron Spectroscopy (AES) depth profile for the studied EPD-HFET. This result substantially enhances device performance at room temperature (300 K). Experimentally, the studied EPD-HFET exhibits a high turn-on voltage, a well suppression on gate leakage, a superior maximum drain saturation current, and an excellent extrinsic transconductance. Moreover, the microwave performance of an EPD-HFET is demonstrated at room temperature. Consequentially, this EPD-gate approach gives a promise for high-performance electronic applications.

• 出版日期2016-10