摘要
The pulsed laser is an effective method to simulate single event effect (SEE) induced by heavy ions. When the laser focused on the chip surface using the backside approach, the laser spot was observed. The experiment data of Si substrate and Si wafer show that the secondary spot is formed due to the reflection of metal layer, and it is verified by the thickness of Si substrate and the depth of laser focusing.
- 出版日期2013-12
- 单位中国科学院大学