Step-by-step growth of an epitaxial Si4O5N3 single layer on SiC(0001) in ultrahigh vacuum

作者：Mizuno Seigi; Matsuo Tomomi; Nakagawa Takeshi

来源：Surface Science, 2017, 661: 22-27.

DOI：10.1016/j.susc.2017.03.004

• Low-energy electron diffraction (LEED)
• SiC
• silicon oxynitride layer

An epitaxial single Si4O5N3 layer was formed on a SiC(0001) surface using a step-by-step growth method in an ultrahigh vacuum condition. First, a silicon adsorbed SiC(0001) surface was prepared. The surface was then exposed to NO gas at 950 degrees C in order to form a Si2ON3 layer. Silicon was deposited on this surface and annealed to adjust the amount of adsorbed Si atoms. Finally, the surface was oxidized at 800 degrees C. The formation of a Si4O5N3 layer was confirmed by low-energy electron diffraction analysis, Auger electron spectroscopy, and scanning tunneling microscopy. Using this procedure, we were able to suppress the growth of graphite-like clusters on the surface, although silicate-like clusters still remained.

• 出版日期2017-7