High-Performance Oxide Thin-Film Transistors Using a Volatile Nitrate Precursor for Low-Temperature Solution Process

作者：Jeong Woong Hee^*; Bae Jung Hyeon; Kim Hyun Jae

来源：IEEE Electron Device Letters, 2012, 33(1): 68-70.

DOI：10.1109/LED.2011.2173897

• Indium zinc oxide
• low temperature
• nitrate precursor (Np)
• solution process
• thin-film transistor (TFT)

Solution-processed InZnO (IZO) thin-film transistors (TFTs) are fabricated using a volatile metal nitrate precursor (Np) with annealing at 300 degrees C. Because the metal Np decomposes at low temperatures, metal oxide bonds were formed, and the organic residue in the oxide thin films was evaporated at low temperature. At 300 degrees C, the IZO thin films with Zn Np were of higher quality than those with Zn acetate precursor due to the reduced atomic disorder and evaporation of residual organics. The mobility of the IZO TFTs with Zn Np was 1.92 cm(2)/V . s at 300 degrees C annealing.

• 出版日期2012-1