Design of continuous-mode GaN power amplifier with compact fundamental impedance solutions on package plane

作者：Pang, Jingzhou^*; He, Songbai; Dai, Zhijiang; Huang, Chaoyi; Peng, Jun; You, Fei

来源：IET Microwaves Antennas & Propagation, 2016, 10(10): 1056-1064.

DOI：10.1049/iet-map.2015.0804

• gallium compounds
• III-V semiconductors
• wide band gap semiconductors
• microwave power amplifiers
• UHF power amplifiers
• impedance convertors
• gain 10 dB
• efficiency 55
• 8 percent to 74
• 1 percent
• efficiency 27 percent
• GaN
• continuous-mode gallium nitride power amplifier
• compact fundamental impedance solution
• package plane
• broadband class-J power amplifier design
• broadband class-J PA design
• voltage region
• clipping waveforms
• broadband matching network

A novel methodology for designing broadband Class-J power amplifiers (PAs) with compact fundamental impedances on the package plane is presented. A simple transistor model with knee voltage region is built to predict efficiency performance and clipping waveforms caused by the clipping effects. To realise the proposed impedance solutions, a broadband matching network is presented based on the shot-stepped Chebyshev impedance transformer. A broadband Gallium Nitride (GaN) PA is designed using this method and achieve a very wide operation band from 0.8 to 3.6 GHz. More than 10 dB gain, 55.8-74.1% drain efficiency and around -30 dBc adjacent channel power ratio are measured without linearisation throughout the entire band. At 33 dBm average output power level, an average power-added efficiency of 27% and adjacent power leakage ratio of -46.3 dBc is obtained with 9 dB peak-to-average power ratio 20 MHz long-term evolution test signals at 2.4 GHz.

• 出版日期2016-7-18
• 单位电子科技大学