Analysis of temperature dependent forward characteristics of Ni/((2)over-bar01) beta-Ga2O3 Schottky diodes

作者：Jayawardena Asanka; Ahyi Ayayi C; Dhar Sarit

来源：Semiconductor Science and Technology, 2016, 31(11): 115002.

DOI：10.1088/0268-1242/31/11/115002

• wide band gap semiconductor
• beta -Gallium oxide (beta-Ga2O3)
• Schottky barrier diode
• barrier height (q Phi(bn))
• ideality factor (n)
• barrier inhomogeneity

In this paper, the temperature dependence of the turn-on characteristics of Schottky barrier diodes fabricated on ((2) over bar 01) oriented n-type beta-Ga2O3 is reported. The barrier height (q Phi(bn)) and ideality factor (n) for Ni-beta-Ga2O3 was found to be 1.08 +/- 0.05 eV and 1.19 respectively at room temperature. The effective Richardson constant (A**) is determined to be 42.96 A cm(-2) K-2, in close agreement with the theoretical value. At low temperatures (85-273 K), the current-voltage characteristics reveal a strong temperature dependence of Schottky barrier heights and ideality factors and a corresponding deviation from the barrier height extracted from capacitance-voltage measurements. A detailed analysis is presented, which suggest that these effects can be attributed to a large barrier inhomogeneity at metal/beta-Ga2O3 interfaces, possibly resulting from interfacial defects, which can be modeled using a potential fluctuation model.

• 出版日期2016-11