Low Temperature Solution-Processed Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors

作者：Ha Young Geun^*

来源：Journal of Nanoscience and Nanotechnology, 2015, 15(9): 6617-6620.

DOI：10.1166/jnn.2015.10718

• Gate Dielectrics
• Hybrid Materials
• OFETs
• Solution-Process
• Low-Temperature Process

We report on the design, preparation, and electrical properties of novel solution-processed organic-inorganic hybrid dielectric films for the low-voltage operation of organic field-effect transistors (OFETs). Hybrid dielectric thin films (similar to 20 nm thick) are easily fabricated by spin-coating a zirconium chloride precursor/organic additive reagent mixture, followed by annealing at low temperatures (similar to 150 degrees C). The smooth and transparent hybrid dielectrics exhibit great insulating properties (leakage current densities similar to 10(-7) A/cm(2) at 2 MV/cm), high capacitance (170 nF/cm(2)). OFETs fabricated with hybrid dielectric and pentacene semiconductor function great at relatively low voltage (mobility: 1 cm(2)/V . s, on/off current ratio: 10(5)).

• 出版日期2015-9