AgBiS2 Semiconductor-Sensitized Solar Cells

作者：Huang Pen Chi; Yang Wei Chih; Lee Ming Way^*

来源：Journal of Physical Chemistry C, 2013, 117(36): 18308-18314.

DOI：10.1021/jp4046337

We present a new ternary semiconductor sensitizer-AgBiS2 for solar cells. AgBiS2 nanoparticles were grown using a two-stage successive ionic layer adsorption and reaction process. Post annealing transformed the double-layered structure into AgBiS2 nanoparticles of similar to 16 nm in diameter. Liquid-junction semiconductor-sensitized solar cells were fabricated from the synthesized AgBiS2 semiconductor. The best cell exhibited a short-circuit current density J(sc) of 7.61 mA/cm(2), an open-circuit voltage of 0.18 V, a fill factor of 38.6%, and a power conversion efficiency eta of 0.53% under 1 sun. The eta increased to 0.76% at a reduced light intensity of 0.148 sun. The external quantum efficiency (EQE) spectrum covered the spectral range of 350-850 nm, with an average EQE of similar to 54% over the main spectral region of 450-650 nm. The J(sc) under 0.148 sun was equal to 1.69 mA/cm(2), a respectable J(sc) for a new sensitizer.

• 出版日期2013-9-12