Modeling the gate-bias dependence of contact resistance in staggered organic field effect transistors based on carrier-concentration dependent mobility

作者：Karimi Alavijeh Hamidreza

来源：Journal of Applied Physics, 2016, 119(10): 105501.

DOI：10.1063/1.4943532

In this paper, using a mobility modified current crowding formalism, we have modeled the gatebias dependence of contact resistance in staggered organic field effect transistors. For this purpose, the gate modulation of the potential and carrier-concentration in the organic semiconductor layer has been investigated by solving the 1-D Poisson's equation. Due to this effect, the charge hopping mobility (mu) and therefore the conductivity of this layer which are carrier-concentration dependent are also modulated. Using an analytical carrier-concentration dependent model for mu with current crowding formalism, the gate-bias dependence of the contact resistance has been exactly simulated. Based on the obtained mobility relation, bulk and channel resistive components of the current crowding model are calculated. This method has been used for simulation of experimental data, and results confirm the reliability of the presented approach.

• 出版日期2016-3-14