科研之友
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摘要
In this paper, a closed-form physical capacitance model for bulk tunnel FETs (TFETs) is proposed based on the surface potential approach for the first time. Fundamentally different from that in the MOSFET, the channel surface potential phi(sf) in the TFET is alternately controlled by the drain bias and gate bias in different operation regions. On the basis of physical insight into the operation mechanism, the analytical model of phi(sf) as a function of terminal bias is established. The Gaussian box is introduced to predict the surface potential profile near the source-body junction. Furthermore, the surface-potential-based capacitance model is derived and the calculated terminal capacitances show good agreement with the TCAD simulation results. With the essential physics considered, excellent validity of the model is achieved for bulk TFETs with a large range of structure parameters and SOI/double-gate (DG) TFETs.
- 出版日期2014-9-7
- 单位北京大学
