Amorphous InGaZnO Ultraviolet Phototransistors With a Thin Ga2O3 Layer

作者：Chang Shoou Jinn^*; Chang T H; Weng W Y; Chiu C J; Chang S P

来源：IEEE Journal of Selected Topics in Quantum Electronics, 2014, 20(6): 3803605.

DOI：10.1109/JSTQE.2014.2330604

• IGZO
• phototransistors
• Ga2O3

The authors report the fabrication of amorphous IGZO (a-IGZO) phototransistors with a thin Ga2O3 layer. It was found that the performances of the phototransistors depend strongly on the oxygen partial pressure during the deposition of the Ga2O3 layer. It was also found that the fabricated devices exhibited good electrical properties with electron mobility (mu(FE)) of 13.2 cm(2)/V.s, subthreshold swing (SS) of 0.13 V/decade, and ON/OFF current ratio%26gt; 5 x 10(5). Furthermore, it was found that two cutoffs exist in the devices prepared with 25% oxygen partial pressure. The deep-ultraviolet (UV)-to-visible rejection ratio and near-UV-to-visible rejection ratio of the fabricated phototransistors were 10(4) and 20, respectively.

• 出版日期2014-12