Analysis of breakdown characteristics in high-k dielectrics under electrostatic discharge impulse stress

作者：Chen Chun Heng^*; Liao Ming Han; Chiu Fu Chien; Hwang Huey Liang

来源：Journal of Applied Physics, 2010, 107(3): 034503.

DOI：10.1063/1.3290973

• electric breakdown
• electrostatic discharge
• high-k dielectric thin films

Transmission line pulse measurements were used to investigate the reliability of the HfO(2) dielectric under an electrostatic discharge event. Time-dependent dielectric breakdown of the gate oxide was characterized down to the microsecond time regime. The positive oxide-trapped charges Q(ot)+ were observed beyond a certain electric field and the corresponding centroid evolution was examined. In the high-field stress regime, the field acceleration parameter of the HfO(2) dielectric is smaller than that of the silicon oxynitride. We also demonstrated this phenomenon can be attributed to the stronger phonon-assisted tunneling process in the high-k dielectrics.

• 出版日期2010-2
• 单位清华大学; 中国科学院电工研究所