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摘要
In this paper, insulated gate bipolar transistor (IGBT) models published in the literature are reviewed, analyzed, compared and classified into different categories according to mathematical type, objectives, complexity, accuracy and speed, Features of the different models are listed. Different modeling criteria are discussed according to various circuit conditions, structures, thermal considerations and accuracies. Some problems and trends in IGBT modeling are discussed.
- 出版日期2000-11
