A novel dual-channel SOI LIGBT with improved reliability

作者：Zhang Shifeng^*; Han Yan; Ding Koubao; Zhang Bin; Zhang Wei; Wu Huanting

来源：2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012, 2012-12-03 to 2012-12-05.

DOI：10.1109/EDSSC.2012.6482761

• Current carrying capability
• Dual channel
• Latch-ups
• Lateral insulated gate bipolar transistors
• Silicon-on-insulators

This paper introduces a novel dual-channel silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT). The reliability has been compared between conventional SOI LIGBT and dual-channel SOI LIGBT. Experiments show that the dual-channel SOI LIGBT leads to a significant improvement in the reliability. That is, the improved latch-up characteristic, and the improved hot-carrier-induced reliability. Moreover, the current carrying capability of dual-channel SOI LIGBT is better than conventional SOI LIGBT.

• 出版日期2012
• 单位浙江大学