ALD of ZnO using diethylzinc as metal-precursor and oxygen as oxidizing agent

作者：Janocha E; Pettenkofer C^*

来源：Applied Surface Science, 2011, 257(23): 10031-10035.

DOI：10.1016/j.apsusc.2011.06.133

• Atomic layer deposition
• Zinc oxide
• Oxygen
• Diethylzinc
• Photoelectron spectroscopy

We report on ZnO atomic layer deposition (ALD) with a precursor combination of diethylzinc as metal-precursor and pure oxygen (O(2)) as oxidant as an alternative to H(2)O as oxygen precursor. The temperature region of self-limiting ALD growth (ALD window) is determined and shows an increase in growth rate of about 60% compared to water as oxygen-precursor. Finally, in situ X-ray photoelectron spectroscopy (XPS) and synchrotron-radiation photoelectron spectroscopy (SR-PES) have been used to analyze the initial growth and film properties of ALD-ZnO deposited in monolayer steps using both precursor combinations.

• 出版日期2011-9-15