Nanoscale characterization and metrology

作者:Diebold Alain C*
来源:Journal of Vacuum Science and Technology A, 2013, 31(5): 050804.
DOI:10.1116/1.4807116

摘要

This paper will take a "From the Lab to the FAB" approach for discussing the measurements and applications of nanoscale characterization and metrology. The nanoscale dimensions of features found in semiconductor materials and devices provide many challenges for characterization of physical properties as well as measurements for process control. The use of multiple measurement methods results in a more complete determination of the properties so that structure-function relationships can be elucidated. Here, the authors use pseudomorphic Si1-xGex on Si(001), nanoscale films of Ni, and nanoscale Hf oxide films to illustrate this principle.

  • 出版日期2013-9

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