Anomalous behavior of 1/f noise in graphene near the charge neutrality point

作者：Takeshita Shunpei^*; Matsuo Sadashige; Tanaka Takahiro; Nakaharai Shu; Tsukagoshi Kazuhito; Moriyama Takahiro; Ono Teruo; Arakawa Tomonori; Kobayashi Kensuke

来源：Applied Physics Letters, 2016, 108(10): 103106.

DOI：10.1063/1.4943642

We investigate the noise in single layer graphene devices from equilibrium to far-from equilibrium and found that the 1/f noise shows an anomalous dependence on the source-drain bias voltage (V-SD). While the Hooge's relation is not the case around the charge neutrality point, we found that it is recovered at very low V-SD region. We propose that the depinning of the electron-hole puddles is induced at finite V-SD, which may explain this anomalous noise behavior.

• 出版日期2016-3-7