The Thermal Stress Analysis for IC Integrations with TSV Interposer by Complement Sector Models

作者：Pang Junwen^*; Wang Jun

来源：Journal of Electronic Materials, 2014, 43(9): 3423-3435.

DOI：10.1007/s11664-014-3273-4

• TSV interposer
• thermal stress
• IC integration
• finite-element analysis
• modeling

The thermal stress of typical integrated circuit (IC) integration with the interposer of through silicon via (TSV) was investigated in this study. To overcome the huge computational costs due to meshing the large amount of TSVs' microstructures, a simplified method, i.e. the complement sector model, was proposed and verified by the symmetric 1/8th full model. Using the sector model, the parametric studies were carried out to reveal the critical locations of TSV and the crucial parameters. Furthermore, statistical methods were invoked to clarify the impact of the major parameters, such as the modulus and coefficient of thermal expansion of underfill materials, the pitch and diameter of TSV, etc. Upon the analysis results, the design of minimized stress in TSV for the IC integration with TSV interposer was achieved.

• 出版日期2014-9
• 单位复旦大学