摘要

A semitransparent Al film of 15 nm, thin films of p-type organic semiconductor nickel phthalocynanine (NiPc) and Al film of 100 nm were deposited in sequence by vacuum evaporation on indium tin oxide (ITO) coated glass substrates. Organic transistors (OTs) were fabricated with two, metal (aluminum) semiconductor (nickel phthalocyanine) Schottky junctions. The effect of light irradiation on their resistance was investigated. It was found that the resistance of the OTs was decreased with increase of irradiance. The energy band diagram of the transistor with two AI-NiPc junctions was developed.

  • 出版日期2017-6