摘要

By using ab initio density functional theory, the structural and electronic properties of (n, n)@(11, 11) double-walled silicon carbide nanotubes (SiCNTs) are investigated. Our calculations reveal the existence of an energetically favorable double-walled nanotube whose interwall distance is about 4.3 angstrom. Interwall spacing and curvature difference are found to be essential for the electronic states around the Fermi level.

  • 出版日期2009-12