Direct Extraction of Equivalent Circuit Parameters for GaAs pHEMT

作者：Sun, Ling; Gao, Jianjun^*; Shen, Li

来源：Journal of Computational and Theoretical Nanoscience, 2015, 12(6): 996-1001.

DOI：10.1166/jctn.2015.3840

• Equivalent Circuits
• HEMT
• Semiconductor Device Modeling
• Parameter Extraction
• Small Signal Model

A new direct parameter extraction method to determine the small signal equivalent circuit model for pseudomorphic high electron-mobility transistors is presented in this paper. This method is a combination of the test structure method and analytical method without reference to numerical optimization. Good agreement is obtained between simulated and measured results for 2 x 20 mu m and 2 x 40 mu m gate width (number of gate fingers x unit gate width) 0.15 mu m pHEMTs in the frequency range of 50 MHz similar to 40 GHz over a wide range of bias points. Model verification is also carried out by comparison of measured and simulated S-parameters in the frequency range of 75 similar to 110 GHz, demonstrating that this approach is valid for 50 MHz similar to 110 GHz frequency range.

• 出版日期2015-6
• 单位华东师范大学; 南通大学