Anatomy of vertical heteroepitaxial interfaces reveals the memristive mechanism in Nb2O5-NaNbO3 thin films

作者：Li Linglong; Lu Lu; Wang Zhiguang; Li Yanxi; Yao Yonggang; Zhang Dawei; Yang Guang^*; Yao Jianjun; Viehland Dwight; Yang Yaodong

来源：Scientific Reports, 2015, 5(1): 9229.

DOI：10.1038/srep09229

Dynamic oxygen vacancies play a significant role in memristive switching materials and memristors can be realized via well controlled doping. Based on this idea we deposite Nb2O5-NaNbO3 nanocomposite thin films on SrRuO3-buffered LaAlO3 substrates. Through the spontaneous phase separation and self-assembly growth, two phases form clear vertical heteroepitaxial nanostructures. The interfaces between niobium oxide and sodium niobate full of ion vacancies form the conductive channels. Alternative I-V behavior attributed to dynamic ion migration reveals the memristive switching mechanism under the external bias. We believe that this phenomenon has a great potential in future device applications.

• 出版日期2015-3-18
• 单位Virginia Tech; 西安交通大学; 美国弗吉尼亚理工大学(Virginia Tech)