Automatic parameter extraction technique for gate leakage current modeling in double gate MOSFET

作者：Darbandy Ghader^*; Gneiting Thomas; Alius Heidrun; Alvarado Joaquin; Cerdeira Antonio; Iniguez Benjamin

来源：Solid-State Electronics, 2013, 89: 111-115.

DOI：10.1016/j.sse.2013.07.009

• Automatic parameter extraction
• Parameters correlation
• Direct tunneling
• TAT
• DG MOSFET

Direct Tunneling (DT) and Trap Assisted Tunneling (TAT) gate leakage current parameters have been extracted and verified considering automatic parameter extraction approach. The industry standard package IC-CAP is used to extract our leakage current model parameters. The model is coded in Verilog-A and the comparison between the model and measured data allows to obtain the model parameter values and parameters correlations/relations. The model and parameter extraction techniques have been used to study the impact of parameters in the gate leakage current based on the extracted parameter values. It is shown that the gate leakage current depends on the interfacial barrier height more strongly than the barrier height of the dielectric layer. There is almost the same scenario with respect to the carrier effective masses into the interfacial layer and the dielectric layer. The comparison between the simulated results and available measured gate leakage current transistor characteristics of Trigate MOSFETs shows good agreement.

• 出版日期2013-11