Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO(2) on In(0.53)Ga(0.47)As

作者：Lee K Y; Lee Y J; Chang P; Huang M L; Chang Y C; Hong M^*; Kwo J

来源：Applied Physics Letters, 2008, 92(25): 252908.

DOI：10.1063/1.2952826

A capacitive effective thickness (CET) value of 1.0 nm has been achieved in atomic layer deposited (ALD) high kappa dielectrics HfO(2) on In(0.53)Ga(0.47)As/InP. The key is a short air exposure under 10 min between removal of the freshly grown semiconductor epilayers and loading to the ALD reactor. This has led to minimal formation of the interfacial layer thickness, as confirmed using x-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. The measured electrical characteristics of metal-oxide-semiconductor diodes of Au/Ti/HfO(2)(4.5 nm)/In(0.53)Ga(0.47)As showed a low leakage current density of 3.8x10(-4) A/cm(2) at V(FB)+1 V, which is about eight orders of magnitudes lower than that of SiO(2) with the same CET. The capacitance-voltage curves show an overall kappa value of 17-18, a nearly zero flatband shift, and an interfacial density of states D(it) of 2x10(12) cm(-2) eV(-1).

• 出版日期2008-6-23
• 单位清华大学