Highly efficient colloid-solution deposition planarization of Hastelloy substrate for IBAD-MgO film

作者：Zhou, Hualan; Chai, Fangfang; Fang, Jianhui^*; Shi, Liyi; Cai, Chuanbing; Yuan, Shuai^*

来源：Research on Chemical Intermediates, 2016, 42(5): 4751-4758.

DOI：10.1007/s11164-015-2314-9

• Y2O3
• Colloid
• Deposition
• Surface planarization

A simple and efficient way to planarize Hastelloy substrate for high-temperature superconductors has been developed. The colloid-solution deposition planarization (CSDP) method consists of two steps: colloid deposition planarization and subsequent precursor solution deposition planarization. The surface roughness of Hastelloy belt decreased from 4.0 to 0.8 nm after Y2O3 colloid deposition and then to 0.3 nm after further yttrium acetate solution deposition. The shrinkage percentage of the colloid deposition layer and solution deposition layer was 20 and 77 %, respectively. Compared with traditional solution deposition planarization, the higher planarization efficiency of CSDP can be attributed to the lower shrinkage percentage of the colloid deposition layer. As a result, ion-beam-assisted deposition (IBAD)-MgO on Hastelloy substrate with CSDP coating showed crystal orientation. Hastelloy belt planarized by the CSDP method will provide a low-cost substrate for high-temperature superconductors.

• 出版日期2016-5
• 单位上海理工大学; 上海大学