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摘要
We discussed analytically the temperature effect on the piezoelectric exciton dissociation rate (Onsager dissociation rate, D) on the p-n junction interface (hybrid inorganic-organic system). For high temperatures (T >> 1), a power series expansion for D about a field parameter b (<< 1) was used, resulting in D congruent to gamma/4/3 pi a(3) . (1 + b) . 2 . n(e). For low temperatures (T << 1), 1 + b + b(2)/3 +..., resulted in an asymptotically complex value that approached zero, and allowed D to also approach zero. Therefore, it is suggested that high temperatures will be useful for verifying piezoelectric exciton dissociation theoretically.
- 出版日期2018-5-21
