Atomically resolved interface structure between epitaxial TiN film and MgO substrate

作者：Wei Lin Lung^*; Yen Tzu Chun; Do Hien; Chang Li^*

来源：Thin Solid Films, 2016, 618: 8-12.

DOI：10.1016/j.tsf.2016.07.037

• Interface
• Epitaxial
• Scanning transmission electron microscopy

In this study, we used a high quality epitaxial TiN thin film grown on MgO (001) substrate for the investigation of the TiN/MgO interface structure which was characterized with scanning transmission electron microscopy (STEM) at atomic resolution. Analyses of high angle annular dark-field and annular bright-field STEM image contrast with X-ray energy dispersive spectroscopy maps show that a 2-4 nm diffuse interlayer of mixed compositions exists coherently between TiN and MgO with the same structure and across the interface the ionic bonding sequences are maintained without any interruption.

• 出版日期2016-11-1