Near UV LEDs Made with in Situ Doped p-n Homojunction ZnO Nanowire Arrays

作者：Chen Min Teng; Lu Ming Pei; Wu Yi Jen; Song Jinhui; Lee Chung Yang; Lu Ming Yen; Chang Yu Cheng; Chou Li Jen; Wang Zhong Lin; Chen Lih Juann^*

来源：Nano Letters, 2010, 10(11): 4387-4393.

DOI：10.1021/nl101907h

• ZnO nanowires
• p-n homojunction
• Near UV LED
• in situ doped

Catalyst-free p-n homojunction ZnO nanowire (NW) arrays in which the phosphorus (P) and zinc (Zn) served as p- and n-type dopants, respectively, have been synthesized for the first time by a controlled in situ doping process for fabricating efficient ultraviolet light-emitting devices. The doping transition region defined as the width for P atoms gradually occupying Zn sites along the growth direction can be narrowed down to sub-50 nm. The cathodoluminescence emission peak at 340 nm emitted from n-type ZnO:Zn NW arrays is likely due to the Burstein-Moss effect in the high electron carrier concentration regime. Further. the electroluminescence spectra from the p-n ZnO NW arrays distinctively exhibit the short-wavelength emission at 342 nm and the blue shift from 342 to 325 nm is observed as the operating voltage further increasing. The ZnO NW p-n homojunctions comprising p-type segment with high electron concentration are promising building blocks for short-wavelength lighting device and photoelectronics.

• 出版日期2010-11
• 单位清华大学