摘要

The Tamm-type surface electronic states at the boundary of the one-dimensional structure with periodically potential profile have been theoretically studied under the condition that the delta-shaped quantum well is at this boundary. The properties of surface electronic states in such a structure have been compared with Tamm electronic states in the absence of a quantum well at the lattice boundary and with electronic states localized near the delta-shaped potential well deep in the lattice. In particular, it has been shown that the existence of the delta-shaped potential well at the lattice boundary facilitates a significant increase in the degree of localization of Tamm-type surface electronic states and makes possible the appearance of these states at arbitrarily small heights of lattice potential barriers.

  • 出版日期2012-3