摘要

This paper presents silicon strip detector designed at AGH with front-end electronics based on ASIC (Application Specific Intergraded Circuits) which is used for diffraction measurements of thin films. Application of this detector for diffraction, in comparison to the standard proportional counter, allows to reduce time of measurement up to 100 times. Two types of 128-strip detectors with pitch between strips centers of 75 mu m and 100 Inn were tested. Angular resolution was determined from measurements of powder standard reference material (SRM 660) LaB6. It was demonstrated that detector with strip pitch 75 mu m had better angular resolution than that of 100 mu m one. The XRD measurements were performed on the metallic polycrystalline inultilayers deposited by sputtering technique: Si(100)/SiO2 47 nm/buffer/IrMn 12 nm/CoFe 15 nm/Al-O 1.4 nm/NiFe 3 nm/Ta 5 nm and Si(100)/SiO2 500 nm/buffer/[Pt 2 nm/Co 0.5 nm]x5. The samples were prepared with four different buffers in order to obtain different texture degree (in the brackets buffers for Pt/Co multilayers): (a) Cu 25 nm, (Cu 10 nm) (b) Ta 5 nut/Cu 25 nm, (Ta 5 nm/Cu 10 nm) (c) Ta 5 nm/Cu 25 mn/Ta 5 nm/Cu 5 nm, (Ta 5 nm/Cu 10 nm/Ta 5 nm) and (d) Ta 5 nm/Cu 25 nm/Ta 5 nm /NiFe 2 mn/Cu 5 nm, (Ta 5 nm/Cu 10 nm/Ta 5 nm/Cu 10 nm). The results measured by our strip detector, conventional proportional counter and commercial X'Celcrator detector are similar in all details specific for diffraction of multilayer. Some advantages of the strip detectors usage for structural analysis of thin films are discussed.

  • 出版日期2008