Compositional dependence of crystallization and structural stability in Ge-Sb-Se chalcogenide films

作者：Wang, Hui; Wang, Guoxiang^*; Shi, Daotian; Shen, Xiang; Lu, Yegang; Nie, Qiuhua

来源：Journal of Non-Crystalline Solids, 2016, 453: 108-112.

DOI：10.1016/j.jnoncrysol.2016.10.003

• Thin films
• Phase transitions
• Crystal structure
• Laser processing

We systematically investigated the structural properties of as-deposited and annealed GexSbySez (x + y + z = 100, 9.5 <= x <= 59, 6.2 <= y <= 42.9, 34.8 <= z <= 51.5) chalcogenide films. For films with x < 34.5, some main Sb-Sb homopolar bonds as well as Sb-Se heteropolar bonds appeared in the as-deposited films, while increasing the Ge content replaced some Se atoms, forming Ge-Se heteropolar bonds, which increased the optical band gap. For films with x >= 34.5, the structures of the as-deposited films were dominated by Ge-Ge and Se-Se homopolar bonds. The annealed Ge-Sb-Se films exhibited a phase transition from amorphous to crystalline for phase change memory. We ascribed the crystal grains of the GexSbySez films (x = 9.5,12.8) to be the Sb phase, while we confirmed those of the films (x = 142, 21.3, 22.9, 25.2) to be a mixture of Sb and Sb2Se3 phases. The films with high Ge content (x = 402, 59) exhibited a stable amorphous phase for optical waveguide application.

• 出版日期2016-12-1
• 单位宁波大学