A Molecular-Rotor Device for Nonvolatile High-Density Memory Applications

作者：Xue Mei^*; Kabehie Sanaz; Stieg Adam Z; Tkatchouk Ekaterina; Benitez Diego; Goddard William A; Zink Jeffrey I; Wang Kang L

来源：IEEE Electron Device Letters, 2010, 31(9): 1047-1049.

DOI：10.1109/LED.2010.2052018

• Molecular rotor
• monolayer
• nonvolatile memory
• redox-induced rotation
• resistive switching
• tunneling transport

A novel memory device based on an electrically driven molecular rotor was fabricated and demonstrated to have bistable switching effects. The device showed an on/off ratio of approximately 10(4), a read window of about 2.5 V, and retention performance of greater than 10(4) s. The analysis of the device I-V characteristics suggests the source of the observed switching effects to be the redox-induced ligand rotation around the copper metal center, which is consistent with the observed temperature dependence of the switching behavior. This organic monolayer device holds a potential for nonvolatile high-density memory applications due to its scalability and reduced cost.

• 出版日期2010-9