Atomic layer deposition of dielectrics for carbon-based electronics

作者：Kim J^*; Jandhyala S

来源：Thin Solid Films, 2013, 546: 85-93.

DOI：10.1016/j.tsf.2013.03.078

• Carbon electronics
• Carbon nanotubes
• Graphene
• Dielectrics
• Atomic layer deposition
• Non-covalent functionalization

Carbon based nanomaterials like nanotubes and graphene have emerged as future generation electronic materials for device applications because of their interesting properties such as high-mobility and ability to carry high-current densities compared to conventional semiconductor materials like silicon. Therefore, there is a need to develop techniques to integrate robust gate dielectrics with high-quality interfaces for these materials in order to attain maximum performance. To date, a variety of methods including physical vapor deposition, atomic layer deposition (ALD), physical assembly among others have been employed in order to integrate dielectrics for carbon nanotube and graphene based field-effect transistors. Owing to the difficulty in wetting pristine surfaces of nanotubes and graphene, most of the ALD methods require a seeding technique involving non-covalent functionalization of their surfaces in order to nucleate dielectric growth while maintaining their intrinsic properties. A comprehensive review regarding the various dielectric integration schemes for emerging devices and their limitations with respect to ALD based methods along with a future outlook is provided.

• 出版日期2013-11-1