An Analytical Broadband Model for Millimeter-Wave Transformers in Silicon Technologies

作者：Leite Bernardo^*; Kerherve Eric; Begueret Jean Baptiste; Belot Didier

来源：IEEE Transactions on Electron Devices, 2012, 59(3): 582-589.

DOI：10.1109/TED.2011.2180909

• Electromagnetic (EM) simulation
• integrated passive components
• millimeter-wave (mm-wave) passive components
• passive component modeling
• transformers

A lumped element model to represent the behavior of millimeter-wave (mm-wave) integrated transformers is presented. Details on the topology allowing efficient mm-wave operation are given. The model presents a 2-pi architecture and contains the equations to evaluate its components values. These equations depend on both technological and geometric characteristics of the transformer. The model is validated through experimental data of a set of 65-nm CMOS and 130-nm BiCMOS transformers. A very close agreement is shown for both S-parameter and inductance values up to 110 GHz.

• 出版日期2012-3