Analytical model for charge transport in organic thin-film transistors: application to polythiophene

作者：Zorai S^*; Bourguiga R

来源：The European Physical Journal - Applied Physics, 2012, 59(2): 20201.

DOI：10.1051/epjap/2012110429

The electronic charge transport in active layer of organic thin-film transistor (OTFT) based on conductor polythiophene (sexithiophene (6T) and octithiophene (8T)) was studied. A mathematical model is presented based on the variable range hopping (VRH) transport theory. Using the VRH model the expression of source-drain current is established for two regimes: linear regime for drain bias V-D = -2 V and saturation regime for V-D = -30 V at low temperature and at room temperature. All electrical key parameters of OTFTs based on polythiophene have been extracted. A good agreement between theoretical model and experimental measurement of electrical characteristics is obtained for both temperature ranges: low temperature and room temperature.

• 出版日期2012-8