Asymmetric bilayer graphene nanoribbon MOSFETs for analog and digital electronics

作者：Dinarvand A^*; Ahmadi V; Darvish Gh

来源：Superlattices and Microstructures, 2016, 93: 202-213.

DOI：10.1016/j.spmi.2016.03.034

• Bilayer graphene nanoribbon (BGN)
• Nonequilibrium Green's NEGF)
• Current-voltage characteristics
• Intrinsic voltage gain
• Cut-off frequency
• Switching delay
• Power delay product (PDP) current switching ratio

In this paper, a new structure was proposed for bilayer graphene nanoribbon field-effect transistor (BGNFET) mainly to enhance the electrical characteristics in analog and digital applications. The proposed device uses two metallic gates on the top and bottom of a bilayer graphene nanoribbon, which is surrounded by SiO2 and connected to heavily doped source/drain contacts. Electrical properties of the proposed device were explored using fully self-consistent solution of Poisson and Schrodinger equations based on the nonequilibrium Green's NEGF) formalism. Significant improvements in the electrical behavior was seen in the simulation results for gates asymmetrically biased. The comparison with graphene nanoribbon FET showed that the proposed structure benefited from higher intrinsic voltage gain and cut-off frequency and improved switching characteristics such as delay and I-on/I-off ratio.

• 出版日期2016-5