Multi-solvent ellipsometric porosimetry analysis of plasma-treated porous SiOCH films

作者：Licitra C^*; Bouyssou R; Chevolleau T; Bertin F

来源：Thin Solid Films, 2010, 518(18): 5140-5145.

DOI：10.1016/j.tsf.2010.03.015

• Ellipsometric porosimetry
• Ultra low-k dielectrics
• Interconnects
• Porous SiOCH

Porous ultra low-k (ULK) dielectrics are used to reduce resistance-capacitance delay for advanced complementary metal oxide semiconductor interconnects. Since the porosity leads to an increased sensitivity of the material to plasma processes (etching and post-etching plasmas), dedicated characterization techniques are needed to assess the ULK properties during its integration. This study shows that ellipsometric porosimetry, employed with an appropriate multi-solvent protocol, can be effectively used to characterize different plasma-treated porous SiOCH (p-SiOCH) films in terms of porosity, pore sealing and hydrophobicity. It was found that after exposure to fluorocarbon, NH(3), H(2), CH(4) or O(2) based plasmas the p-SiOCH surface is modified leading to moisture uptake. According to the plasma, the solvent adsorption is also modified due to a densification of the surface. In that case solvent adsorption measurements were performed in a kinetic mode to quantify the plasma-sealing effect.

• 出版日期2010-7-1
• 单位中国地震局