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摘要
In this paper, we demonstrate the planar Schottky diode on GaAs substrate for terahertz applications. A nanoscale dot and T-shaped disk has been developed as the anode for terahertz Schottky diode. The low parasitic elements of the nanoscale anode with T-shaped disk yield high cutoff frequency characteristic. The fabricated Schottky diode with anode diameter of 500 nm has series resistance of 21 Omega, ideality factor of 1.32, junction capacitance of 8.03 fF, and cutoff frequency of 944 GHz.
- 出版日期2016-9
