A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations

作者：Guan Ximeng^*; Yu Shimeng; Wong H S Philip

来源：IEEE Electron Device Letters, 2012, 33(10): 1405-1407.

DOI：10.1109/LED.2012.2210856

• Compact model
• resistive random access memory (RRAM) conducting filament
• resistive switching
• temperature
• variation

A SPICE compact model is developed for metal-oxide-based resistive random access memory (RRAM). The model includes the critical impact of temperature change and temporal variation. Using experimental data from HfOx-based RRAM, the model reproduces both the voltage-time relationship and the cycle-to-cycle variation in the RESET of the memory cells.

• 出版日期2012-10