A Single-Temperature Trimming Technique for MOS-Input Operational Amplifiers Achieving 0.33 mu V/degrees C Offset Drift

作者：Bolatkale Muhammed^*; Pertijs Michiel A P; Kindt Wilko J; Huijsing Johan H; Makinwa Kofi A A

来源：IEEE Journal of Solid-State Circuits, 2011, 46(9): 2099-2107.

DOI：10.1109/JSSC.2011.2139530

• CMOS analog integrated circuits
• low-offset
• offset drift
• operational amplifiers
• trimming

A MOS-input operational amplifier has a reconfigurable input stage that enables trimming of both offset and offset drift based only on single-temperature measurements. The input stage consists of a MOS differential pair, whose offset drift is predicted from offset voltage measurements made at well-defined bias currents. A theoretical motivation for this approach is presented and validated experimentally by characterizing the offset of pairs of discrete MOS transistors as a function of bias current and temperature. An opamp using the proposed single-temperature trimming technique has been designed and fabricated in a 0.5 mu m BiCMOS process. After single-temperature trimming, it achieves a maximum offset of +/- 30 mu V and an offset drift of 0.33 mu V/degrees C (3 sigma) over the temperature range of -40 degrees C to +125 degrees C.

• 出版日期2011-9