Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25-mu m AlGaN/GaN HEMTs

作者：Silvestri Marco^*; Uren Michael J; Kuball Martin

来源：IEEE Electron Device Letters, 2012, 33(11): 1550-1552.

DOI：10.1109/LED.2012.2214200

• High-electron-mobility transistor (HEMT)
• hot carriers
• interface traps
• reliability

Using the dynamic transconductance frequency dispersion technique, we characterize unstressed and hot-electron stressed short-channel AlGaN/GaN high-electron-mobility transistors. The results reported in this letter demonstrate that the stress-induced degradation in dc and pulsed characteristics is unlikely to be ascribable to sizable trap generation at the AlGaN/GaN interface.

• 出版日期2012-11