Amphoteric Nature of Sn in CdS Nanowires

作者：Zhang Mengyao; Wille Marcel; Roeder Robert; Heedt Sebastian; Huang Liubing; Zhu Zheng; Geburt Sebastian; Gruetzmacher Detlev; Schaepers Thomas; Ronning Carsten; Lu Jia Grace^*

来源：Nano Letters, 2014, 14(2): 518-523.

DOI：10.1021/nl4035169

• CdS nanowire
• VLS growth
• doping
• compensation
• low-temperature photoluminescence

High-quality CdS nanowires with uniform Sn doping were synthesized using a Sn-catalyzed chemical vapor deposition method. X-ray diffraction and transmission electron microscopy demonstrate the single crystalline wurtzite structure of the CdS/Sn nanowires. Both donor and acceptor levels, which originate from the amphoteric nature of Sn in II-VI semiconductors, are identified using low-temperature microphotoluminescence. This self-compensation effect was cross examined by gate modulation and temperature-dependent electrical transport measurement. They show an overall n-type behavior with relatively low carrier concentration and low carrier mobilities. Moreover, two different donor levels due to intrinsic and extrinsic doping could be distinguished. They agree well with both the electrical and optical data.

• 出版日期2014-2