科研之友
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摘要
A technique of cantilever based scanning near-field optical microscopy is applied. Using InP/GaInP quantum dots structures, 100nm (lambda/7) spatial resolution of the technique in illumination-collection regime is tested. The possibility to obtain optical data with a subdiffraction resolution is exploited for clarifying the transversal electric field mode configuration of the radiating semiconductor laser.
- 出版日期2015-3-12
