Ab initio theory of the N2V defect in diamond for quantum memory implementation

作者:Udvarhelyi Peter; Thiering Gergo; Londero Elisa; Gali Adam*
来源:PHYSICAL REVIEW B, 2017, 96(15): 155211.
DOI:10.1103/PhysRevB.96.155211

摘要

The N2V defect in diamond is characterized by means of ab initio methods relying on density functional theory calculated parameters of a Hubbard model Hamiltonian. It is shown that this approach appropriately describes the energy levels of correlated excited states induced by this defect. By determining its critical magneto-optical parameters, we propose to realize a long-living quantum memory by N2V defect, i.e., H3 color center in diamond.

  • 出版日期2017-10-30