科研之友
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摘要
In this paper, we propose a novel MOSFET in which an ordinary paraelectric insulator is replaced with one in which permittivity is nonlinearly dependent on the electric field. Technology computer-aided design simulation reveals that a variation in the permittivity of the gate insulator in conjunction with a variation in the gate electric field can lead to excellent subthermal subthreshold swings (34 mV/decade), with high on-currents comparable to those of conventional MOSFETs. We also demonstrate the advantages of nonlinear dielectric MOSFETS (NLD-MOSFETs) over conventional MOSFETs by showing a 10-fold shorter intrinsic delay at a supply voltage of 0.2V.
- 出版日期2016-4
