A RESURF LDMOSFET with a Dummy Gate on Partial SOI

作者：Ebrahimi Behzad^*; Afzal Behrouz; Afzali Kusha Ali; Mohammadi Saeed

来源：Journal of the Korean Physical Society, 2012, 60(5): 842-848.

DOI：10.3938/jkps.60.842

• Breakdown voltage
• Dummy gate
• LDMOSFET
• RESURF
• PSOI

In this paper, we propose a laterally double-diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) that uses a dummy gate on top of the lightly-doped drain (LDD) region in a reduced surface field (RESURF) structure. The structure is based on the partial silicon-on-insulator (PSOI) structure to increase the operating frequency of the device. The use of the dummy gate induces another electric field peak in the structure, which increases the breakdown voltage of the transistor. It also improves the gate-drain feedback capacitance, the transconductance, and the ON-resistance of the device. For a LDD length of 3 mu m, the breakdown voltage increases about 10%, the transconductance increases over 200%, and the ON-resistance decreases about 45%. When a LDD length of 10 mu m is used, the increase in the breakdown voltage is 17%. In addition, we propose a breakdown voltage model for the structure, which may be used to optimize the design of the structure.

• 出版日期2012-3