An Updated Perspective of Single Event Gate Rupture and Single Event Burnout in Power MOSFETs

作者：Titus Jeffrey L^*

来源：IEEE Transactions on Nuclear Science, 2013, 60(3): 1912-1928.

DOI：10.1109/TNS.2013.2252194

• Dielectric rupture
• powerMOSFET
• SEB
• SEGR
• single-event burnout
• single-event gate rupture

Studies over the past 25 years have shown that heavy ions can trigger catastrophic failure modes in power MOSFETs [e. g., single-event gate rupture (SEGR) and single-event burnout (SEB)]. In 1996, two papers were published in a special issue of the IEEE TRANSACTION ON NUCLEAR SCIENCE [Johnson, Palau, Dachs, Galloway and Schrimpf, "A Review of the Techniques Used for Modeling Single-Event Effects in Power MOSFETs," IEEE Trans. Nucl. Sci., vol. 43, no. 2, pp. 546-560, April. 1996], [Titus and Wheatley, "Experimental Studies of Single-Event Gate Rupture and Burnout in Vertical Power MOSFETs," IEEE Trans. Nucl. Sci., vol. 43, no. 2, pp. 533-545, Apr. 1996]. Those two papers continue to provide excellent information and references with regard to SEB and SEGR in vertical planar MOSFETs. This paper provides updated references/information and provides an updated perspective of SEB and SEGR in vertical planar MOSFETs as well as provides references/information to other device types that exhibit SEB and SEGR effects.

• 出版日期2013-6