科研之友
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摘要
Photothermal deflection spectroscopy is used in order to investigate near- and sub-band gap absorption of Si-doped GaSb epilayers deposited by MBE on a semi-insulating GaAs substrate. The optical absorption spectra show an extra absorption on the transparency region below the bandgap due to free-carrier absorption. However, for energies above the gap, we notice a linear behavior of the square root of the absorption coefficient versus the heating beam energy, which is attributed to phonon-assisted absorption. From interpolation of the phonon absorption to low energies we have determined the free-carrier absorption that is found to follow the Drude law.
- 出版日期2013-11
