A numerical model for the leakage characteristics in ferroelectric thin films under ionizing radiation

作者：Sun, Shulei; Ma, Ying^*; Zhou, Yichun; Wu, Chuanlu; Li, Jiancheng

来源：Radiation Effects and Defects in Solids-Incorporating Plasma Science and Plasma Technology, 2014, 169(6): 538-546.

DOI：10.1080/10420150.2014.910210

• space-charge limited current
• ferroelectric thin film
• ionizing radiation

A numerical model is developed to describe the leakage characteristics in ferroelectric thin films under ionizing radiation. The trap-controlled space-charge-limited conduction mechanism is modified by considering radiation-induced charge carriers and changes in the relative dielectric constant. The effect of dose rate is related to the changes in the carrier mobility. Numerical simulation using this model reveals a radiation hardness of 10Mrad(Si) for barium strontium titanate (BST) thin films at a constant dose rate of 10Krad(Si)/s. Differences in the leakage behavior under radiation for different conduction regions are also discussed. This model provides a useful tool in predicting the leakage behavior under ionizing radiation and estimating the radiation hardness for ferroelectric materials.

• 出版日期2014-6-3
• 单位湘潭大学; 中国人民解放军国防科学技术大学