A comparative study of TiN and TiC: Oxidation resistance and retention of xenon at high temperature and under degraded vacuum

作者：Gavarini S^*; Bes R; Millard Pinard N; Cardinal S; Peaucelle C; Perrat Mabilon A; Garnier V; Gaillard C

来源：Journal of Applied Physics, 2011, 109(1): 014906.

DOI：10.1063/1.3524267

Dense TiN and TiC samples were prepared by hot pressing using micrometric powders. Xenon species (simulating rare gas fission products) were then implanted into the ceramics. The samples were annealed for 1 h at 1500 degrees C under several degraded vacuums with P(O2) varying from 10(-6) to 2 x 10(-4) mbars. The oxidation resistance of the samples and their retention properties with respect to preimplanted xenon species were analyzed using scanning electron microscopy, grazing incidence x-ray diffraction, Rutherford backscattering spectrometry, and nuclear backscattering spectrometry. Results indicate that TiC is resistant to oxidation and does not release xenon for P(O2) <= 6 x 10(-6) mbars. When P(O2) increases, geometric oxide crystallites appear at the surface depending on the orientation and size of TiC grains. These oxide phases are Ti(2)O(3), Ti(3)O(5), and TiO(2). Apparition of oxide crystallites is associated with the beginning of xenon release. TiC surface is completely covered by the oxide phases at P(O2) = 2 x 10(-4) mbars up to a depth of 3 mu m and the xenon is then completely released. For TiN samples, the results show a progressive apparition of oxide crystallites (Ti(3)O(5) mainly) at the surface when P(O2) increases. The presence of the oxide crystallites is also directly correlated with xenon release, the more oxide crystallites are growing the more xenon is released. TiN surface is completely covered by an oxide layer at P(O2) = 2 x 10(-4) mbars up to 1 mu m. A correlation between the initial fine microstructure of TiN and the properties of the growing layer is suggested.

• 出版日期2011-1-1